On current transients in MoS2 Field Effect Transistors

Influence of post-annealing on the off current of MoS2 field-effect transistors

Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS2 is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility and pristine band gap. In this paper, we focus on the evolution of the electrical property of the Mo...

Energetic mapping of oxide traps in MoS2 field-effect transistors

The performance of MoS2 transistors is strongly affected by charge trapping in oxide traps with very broad distributions of time constants. These defects degrade the mobility and additionally lead to the hysteresis of the gate transfer characteristics, which presents a crucial performance and reliability issue for these new technologies. Here we perform a detailed study of the hysteresis in dou...

Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors

S. Fathipour, M. Remskar, A. Varlec, A. Ajoy, R. Yan, S. Vishwanath, S. Rouvimov, W. S. Hwang, H. G. Xing, D. Jena, and A. Seabaugh Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Solid State Physics Department, Jo!zef Stefan Institute, Ljubljana, Slovenia Department of Electrical Engineering, Cornell University, Ithaca, New York 14850, USA Departm...

MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts

For the first time, n-type few-layer MoS2 fieldeffect transistors (FETs) with graphene/Ti as the heterocontacts have been fabricated, showing more than 160-mA/mm drain current at 1-μm gate length with an ON-OFF current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in ON-resistance and a 3.3 times improvement in contact resistance with hetero...

The Valley Hall Effect in MoS2 Transistors